Infineon HEXFET N-Channel MOSFET, 17 A, 100 V, 3-Pin DPAK IRLR3410TRPBF
- RS Stock No.:
- 830-3379
- Mfr. Part No.:
- IRLR3410TRPBF
- Brand:
- Infineon
Subtotal (1 pack of 20 units)*
£9.22
(exc. VAT)
£11.06
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 20 unit(s) shipping from 06 October 2025
- Plus 3,140 unit(s) shipping from 13 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 + | £0.461 | £9.22 |
*price indicative
- RS Stock No.:
- 830-3379
- Mfr. Part No.:
- IRLR3410TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 17 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | DPAK (TO-252) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 155 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 79 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 34 nC @ 5 V | |
| Transistor Material | Si | |
| Length | 6.73mm | |
| Maximum Operating Temperature | +175 °C | |
| Width | 6.22mm | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 17 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type DPAK (TO-252) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 155 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 79 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 34 nC @ 5 V | ||
Transistor Material Si | ||
Length 6.73mm | ||
Maximum Operating Temperature +175 °C | ||
Width 6.22mm | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
The Infineon IRLR3410 is the 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package. The D-PAK is designed for surface mounting using vapour phase, infrared, or wave soldering techniques.
Advanced process technology
Fast switching
Fully avalanche rated
Fast switching
Fully avalanche rated
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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