MPN

Infineon HEXFET Type N-Channel MOSFET, 17 A, 100 V TO-263 IRL530NSTRLPBF

RS Stock No.:: 258-3992
Mfr. Part No.:: IRL530NSTRLPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 17 A, 100 V TO-263 IRL530NSTRLPBF

Bulk discount available

Subtotal (1 pack of 5 units)*

£5.70

(exc. VAT)

£6.85

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 50 unit(s) shipping from 29 December 2025

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Units	Per unit	Per Pack*
5 - 45	£1.14	£5.70
50 - 120	£1.026	£5.13
125 - 245	£0.958	£4.79
250 - 495	£0.89	£4.45
500 +	£0.832	£4.16

*price indicative

RS Stock No.:: 258-3992
Mfr. Part No.:: IRL530NSTRLPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	17A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-263
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	150mΩ
	Typical Gate Charge Qg @ Vgs	22.7nC
	Maximum Power Dissipation Pd	3.8W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No
	Distrelec Product Id	304-40-548

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 17A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-263
	Mount Type Surface
	Maximum Drain Source Resistance Rds 150mΩ
	Typical Gate Charge Qg @ Vgs 22.7nC
	Maximum Power Dissipation Pd 3.8W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No
	Distrelec Product Id 304-40-548

Datasheet - IRL530NSTRLPBF

The Infineon HEXFET power MOSFET is fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

Planar cell structure for wide SOA

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100kHz

Industry standard surface-mount power package