IXYS GigaMOS, HiperFET N-Channel MOSFET, 550 A, 55 V, 24-Pin SMPD MMIX1T550N055T2

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Subtotal (1 unit)*

£38.80

(exc. VAT)

£46.56

(inc. VAT)

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Units
Per unit
1 - 1£38.80
2 - 4£38.02
5 - 9£36.85
10 - 14£36.47
15 +£36.08

*price indicative

Packaging Options:
RS Stock No.:
875-2500
Mfr. Part No.:
MMIX1T550N055T2
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

550 A

Maximum Drain Source Voltage

55 V

Package Type

SMPD

Series

GigaMOS, HiperFET

Mounting Type

Surface Mount

Pin Count

24

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Maximum Power Dissipation

830 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

595 nC @ 10 V

Length

25.25mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

23.25mm

Forward Diode Voltage

1.2V

Height

5.7mm

Minimum Operating Temperature

-55 °C

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series



MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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