IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 420 A, 100 V Enhancement, 4-Pin SOT-227

Subtotal (1 tube of 10 units)*

£201.08

(exc. VAT)

£241.30

(inc. VAT)

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  • 570 unit(s) shipping from 22 October 2026
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Units
Per unit
Per Tube*
10 +£20.108£201.08

*price indicative

RS Stock No.:
168-4579
Mfr. Part No.:
IXFN420N10T
Brand:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

420A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-227

Series

GigaMOS Trench HiperFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

2.3mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

670nC

Maximum Power Dissipation Pd

1.07kW

Maximum Operating Temperature

175°C

Height

9.6mm

Length

38.23mm

Standards/Approvals

No

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


MOSFET Transistors, IXYS


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