IXYS GigaMOS Trench HiperFET N-Channel MOSFET, 420 A, 100 V, 4-Pin SOT-227 IXFN420N10T

View all MOSFETs

Subtotal (1 tube of 10 units)*

£201.08

(exc. VAT)

£241.30

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 10 unit(s) ready to ship
  • Plus 100 unit(s) shipping from 31 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
10 +£20.108£201.08

*price indicative

RS Stock No.:
168-4579
Mfr. Part No.:
IXFN420N10T
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

420 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-227

Series

GigaMOS Trench HiperFET

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

2.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

1.07 kW

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

25.07mm

Length

38.23mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

670 nC @ 10 V

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

9.6mm

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series



MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links