IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 420 A, 100 V Enhancement, 4-Pin SOT-227

Subtotal (1 tube of 10 units)*

£230.41

(exc. VAT)

£276.49

(inc. VAT)

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Temporarily out of stock
  • 10 unit(s) shipping from 02 July 2026
  • Plus 570 unit(s) shipping from 29 October 2026
  • Plus 300 unit(s) shipping from 01 January 2027
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Units
Per unit
Per Tube*
10 +£23.041£230.41

*price indicative

RS Stock No.:
168-4579
Mfr. Part No.:
IXFN420N10T
Brand:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

420A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-227

Series

GigaMOS Trench HiperFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

2.3mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.07kW

Typical Gate Charge Qg @ Vgs

670nC

Maximum Operating Temperature

175°C

Height

9.6mm

Standards/Approvals

No

Length

38.23mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


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