IXYS GigaMOS Trench HiperFET N-Channel MOSFET, 420 A, 100 V, 4-Pin SOT-227 IXFN420N10T

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Subtotal (1 tube of 10 units)*

£201.08

(exc. VAT)

£241.30

(inc. VAT)

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  • 10 unit(s) ready to ship
  • Plus 110 unit(s) shipping from 09 October 2025
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Per Tube*
10 +£20.108£201.08

*price indicative

RS Stock No.:
168-4579
Mfr. Part No.:
IXFN420N10T
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

420 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-227

Series

GigaMOS Trench HiperFET

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

2.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

1.07 kW

Maximum Gate Source Voltage

-20 V, +20 V

Width

25.07mm

Number of Elements per Chip

1

Length

38.23mm

Typical Gate Charge @ Vgs

670 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

9.6mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series



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