IXYS GigaMOS Trench HiperFET N-Channel MOSFET, 360 A, 100 V, 4-Pin SOT-227 IXFN360N10T

View all MOSFETs
Bulk discount available

Subtotal (1 unit)*

£25.64

(exc. VAT)

£30.77

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 50 unit(s) ready to ship
  • Plus 13 unit(s) ready to ship from another location
  • Plus 1,305 unit(s) shipping from 16 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 1£25.64
2 - 4£23.10
5 - 9£22.04
10 - 19£21.29
20 +£20.87

*price indicative

RS Stock No.:
125-8041
Distrelec Article No.:
302-53-370
Mfr. Part No.:
IXFN360N10T
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

360 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-227

Series

GigaMOS Trench HiperFET

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

2.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

830 W

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

525 nC @ 10 V

Length

38.23mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Width

25.07mm

Height

9.6mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Related links