IXYS GigaMOS Trench HiperFET N-Channel MOSFET, 360 A, 100 V, 4-Pin SOT-227 IXFN360N10T

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£25.64

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£30.77

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1 - 1£25.64
2 - 4£23.10
5 - 9£22.04
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RS Stock No.:
125-8041
Distrelec Article No.:
302-53-370
Mfr. Part No.:
IXFN360N10T
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

360 A

Maximum Drain Source Voltage

100 V

Series

GigaMOS Trench HiperFET

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

2.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

830 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

525 nC @ 10 V

Length

38.23mm

Width

25.07mm

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

9.6mm

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series



MOSFET Transistors, IXYS


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