IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 360 A, 100 V Enhancement, 4-Pin SOT-227 IXFN360N10T

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Subtotal (1 unit)*

£25.64

(exc. VAT)

£30.77

(inc. VAT)

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  • 81 unit(s) ready to ship
  • Plus 4 unit(s) ready to ship from another location
  • Plus 875 unit(s) shipping from 05 June 2026
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Units
Per unit
1 - 1£25.64
2 - 4£23.10
5 - 9£22.04
10 - 19£21.29
20 +£20.87

*price indicative

RS Stock No.:
125-8041
Distrelec Article No.:
302-53-370
Mfr. Part No.:
IXFN360N10T
Brand:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

360A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-227

Series

GigaMOS Trench HiperFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

2.6mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

830W

Typical Gate Charge Qg @ Vgs

525nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

9.6mm

Length

38.23mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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