IXYS HiperFET N-Channel MOSFET, 24 A, 1000 V, 4-Pin SOT-227 IXFN24N100

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Subtotal (1 tube of 10 units)*

£367.73

(exc. VAT)

£441.28

(inc. VAT)

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  • Plus 90 unit(s) shipping from 27 October 2025
  • Plus 999,999,900 unit(s) shipping from 28 September 2026
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Per unit
Per Tube*
10 +£36.773£367.73

*price indicative

RS Stock No.:
146-1694
Mfr. Part No.:
IXFN24N100
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

1000 V

Series

HiperFET

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

390 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

568 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

267 nC @ 10 V

Length

38.23mm

Width

25.42mm

Transistor Material

Si

Number of Elements per Chip

1

Height

9.6mm

Minimum Operating Temperature

-55 °C

N-channel Power MOSFET, IXYS HiperFET™ Series



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