IXYS HiperFET N-Channel MOSFET, 36 A, 1000 V, 4-Pin SOT-227 IXFN36N100

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Subtotal (1 tube of 10 units)*

£576.51

(exc. VAT)

£691.81

(inc. VAT)

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Temporarily out of stock
  • 20 unit(s) shipping from 28 April 2026
  • Plus 10 unit(s) shipping from 29 September 2026
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Units
Per unit
Per Tube*
10 +£57.651£576.51

*price indicative

RS Stock No.:
168-4473
Mfr. Part No.:
IXFN36N100
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

1000 V

Package Type

SOT-227

Series

HiperFET

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

240 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

700 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

25.42mm

Typical Gate Charge @ Vgs

380 nC @ 10 V

Length

38.23mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.6mm

N-channel Power MOSFET, IXYS HiperFET™ Series



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