IXYS HiperFET N-Channel MOSFET, 110 A, 850 V, 4-Pin SOT-227 IXFN110N85X
- RS Stock No.:
- 146-4396
- Distrelec Article No.:
- 302-53-360
- Mfr. Part No.:
- IXFN110N85X
- Brand:
- IXYS
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£67.29
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£80.75
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In Stock
- 10 unit(s) ready to ship
- Plus 999,999,989 unit(s) shipping from 08 October 2026
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Units | Per unit |
|---|---|
| 1 - 1 | £67.29 |
| 2 - 4 | £65.94 |
| 5 + | £63.93 |
*price indicative
- RS Stock No.:
- 146-4396
- Distrelec Article No.:
- 302-53-360
- Mfr. Part No.:
- IXFN110N85X
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 110 A | |
| Maximum Drain Source Voltage | 850 V | |
| Series | HiperFET | |
| Package Type | SOT-227 | |
| Mounting Type | Screw Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 33 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5.5V | |
| Minimum Gate Threshold Voltage | 3.5V | |
| Maximum Power Dissipation | 1.17 kW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Typical Gate Charge @ Vgs | 425 @ 10 V nC | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 38.23mm | |
| Width | 25.07mm | |
| Height | 9.6mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.4V | |
Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 110 A | ||
Maximum Drain Source Voltage 850 V | ||
Series HiperFET | ||
Package Type SOT-227 | ||
Mounting Type Screw Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 33 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5.5V | ||
Minimum Gate Threshold Voltage 3.5V | ||
Maximum Power Dissipation 1.17 kW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Typical Gate Charge @ Vgs 425 @ 10 V nC | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 38.23mm | ||
Width 25.07mm | ||
Height 9.6mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.4V | ||
The 850V Ultra-Junction X-Class Power MOSFETs with fast body diodes represent a new power semiconductor product line from IXYS Corporation. These rugged devices display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, the new 850V devices exhibit the lowest on-state resistances (33 milliohm in the SOT-227 package and 41 milliohm in the PLUS264, for instance), along with low gate charges and superior dv/dt performance.
Ultra low on-resistance RDS(ON) and gate charge Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
Related links
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