IXYS HiperFET N-Channel MOSFET, 110 A, 850 V, 4-Pin SOT-227 IXFN110N85X

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£66.16

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£79.39

(inc. VAT)

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RS Stock No.:
146-4396
Distrelec Article No.:
302-53-360
Mfr. Part No.:
IXFN110N85X
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

850 V

Package Type

SOT-227

Series

HiperFET

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

1.17 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

25.07mm

Maximum Operating Temperature

+150 °C

Length

38.23mm

Typical Gate Charge @ Vgs

425 @ 10 V nC

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

9.6mm

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