IXYS HiperFET N-Channel MOSFET, 110 A, 850 V, 4-Pin SOT-227 IXFN110N85X

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£80.75

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RS Stock No.:
146-4396
Distrelec Article No.:
302-53-360
Mfr. Part No.:
IXFN110N85X
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

850 V

Series

HiperFET

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

1.17 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

425 @ 10 V nC

Number of Elements per Chip

1

Length

38.23mm

Width

25.07mm

Height

9.6mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

The 850V Ultra-Junction X-Class Power MOSFETs with fast body diodes represent a new power semiconductor product line from IXYS Corporation. These rugged devices display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, the new 850V devices exhibit the lowest on-state resistances (33 milliohm in the SOT-227 package and 41 milliohm in the PLUS264, for instance), along with low gate charges and superior dv/dt performance.

Ultra low on-resistance RDS(ON) and gate charge Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages

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