IXYS HiperFET N-Channel MOSFET, 36 A, 1000 V, 4-Pin SOT-227 IXFN36N100

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Subtotal (1 unit)*

£63.62

(exc. VAT)

£76.34

(inc. VAT)

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  • 13 unit(s) shipping from 07 October 2025
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1 - 1£63.62
2 - 4£60.44
5 +£57.26

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RS Stock No.:
193-795
Mfr. Part No.:
IXFN36N100
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

1000 V

Series

HiperFET

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

240 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

700 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

380 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

38.23mm

Number of Elements per Chip

1

Transistor Material

Si

Width

25.42mm

Height

9.6mm

Minimum Operating Temperature

-55 °C

N-channel Power MOSFET, IXYS HiperFET™ Series



MOSFET Transistors, IXYS


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