IXYS GigaMOS Trench HiperFET N-Channel MOSFET, 360 A, 100 V, 4-Pin SOT-227 IXFN360N10T

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Subtotal (1 tube of 10 units)*

£225.92

(exc. VAT)

£271.10

(inc. VAT)

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Units
Per unit
Per Tube*
10 +£22.592£225.92

*price indicative

RS Stock No.:
168-4577
Mfr. Part No.:
IXFN360N10T
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

360 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-227

Series

GigaMOS Trench HiperFET

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

2.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

830 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

25.07mm

Number of Elements per Chip

1

Length

38.23mm

Typical Gate Charge @ Vgs

525 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

9.6mm

Forward Diode Voltage

1.2V

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series



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