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    N-Channel MOSFET, 360 A, 100 V, 4-Pin SOT-227 IXYS IXFN360N10T

    Subtotal (1 tube of 10 units)**

    £215.21

    (exc. VAT)

    £258.25

    (inc. VAT)

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    1480 In stock - FREE next working day delivery available*

    * Delivery dates may change based on your chosen quantity and delivery address.

    Units
    Per unit
    Per Tube**
    10 +£21.521£215.21

    **price indicative

    RS Stock No.:
    168-4577
    Mfr. Part No.:
    IXFN360N10T
    Brand:
    IXYS
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    Brand

    IXYS

    Channel Type

    N

    Maximum Continuous Drain Current

    360 A

    Maximum Drain Source Voltage

    100 V

    Package Type

    SOT-227

    Series

    GigaMOS Trench HiperFET

    Mounting Type

    Screw Mount

    Pin Count

    4

    Maximum Drain Source Resistance

    2.6 mΩ

    Channel Mode

    Enhancement

    Maximum Gate Threshold Voltage

    4.5V

    Minimum Gate Threshold Voltage

    2.5V

    Maximum Power Dissipation

    830 W

    Maximum Gate Source Voltage

    -20 V, +20 V

    Length

    38.23mm

    Typical Gate Charge @ Vgs

    525 nC @ 10 V

    Maximum Operating Temperature

    +175 °C

    Number of Elements per Chip

    1

    Width

    25.07mm

    Height

    9.6mm

    Minimum Operating Temperature

    -55 °C

    Forward Diode Voltage

    1.2V

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