IXYS GigaMOS TrenchT2 HiperFET N-Channel MOSFET, 310 A, 150 V, 4-Pin SOT-227 IXFN360N15T2

View all MOSFETs
Bulk discount available

Subtotal (1 unit)*

£44.56

(exc. VAT)

£53.47

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 3 unit(s) ready to ship
  • Plus 77 unit(s) shipping from 09 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 1£44.56
2 - 4£43.66
5 +£42.33

*price indicative

RS Stock No.:
125-8042
Distrelec Article No.:
302-53-371
Mfr. Part No.:
IXFN360N15T2
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

310 A

Maximum Drain Source Voltage

150 V

Series

GigaMOS TrenchT2 HiperFET

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

1.07 kW

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

38.23mm

Typical Gate Charge @ Vgs

715 nC @ 10 V

Width

25.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

9.6mm

COO (Country of Origin):
PH

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series



MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links