IXYS GigaMOS Trench HiperFET N-Channel MOSFET, 420 A, 100 V, 4-Pin SOT-227 IXFN420N10T
- RS Stock No.:
- 125-8043
- Mfr. Part No.:
- IXFN420N10T
- Brand:
- IXYS
Bulk discount available
Subtotal (1 unit)*
£25.94
(exc. VAT)
£31.13
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 6 unit(s) ready to ship
- Plus 107 unit(s) shipping from 30 October 2025
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Units | Per unit |
|---|---|
| 1 - 1 | £25.94 |
| 2 - 4 | £22.67 |
| 5 - 9 | £21.92 |
| 10 - 19 | £21.35 |
| 20 + | £20.83 |
*price indicative
- RS Stock No.:
- 125-8043
- Mfr. Part No.:
- IXFN420N10T
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 420 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | GigaMOS Trench HiperFET | |
| Package Type | SOT-227 | |
| Mounting Type | Screw Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 2.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 1.07 kW | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 670 nC @ 10 V | |
| Length | 38.23mm | |
| Width | 25.07mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.6mm | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 420 A | ||
Maximum Drain Source Voltage 100 V | ||
Series GigaMOS Trench HiperFET | ||
Package Type SOT-227 | ||
Mounting Type Screw Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 2.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 1.07 kW | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 670 nC @ 10 V | ||
Length 38.23mm | ||
Width 25.07mm | ||
Minimum Operating Temperature -55 °C | ||
Height 9.6mm | ||
Forward Diode Voltage 1.2V | ||
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