IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 420 A, 100 V Enhancement, 4-Pin SOT-227 IXFN420N10T

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Subtotal (1 unit)*

£25.94

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£31.13

(inc. VAT)

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  • 570 unit(s) shipping from 22 October 2026
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1 - 1£25.94
2 - 4£22.67
5 - 9£21.92
10 - 19£21.35
20 +£20.83

*price indicative

RS Stock No.:
125-8043
Mfr. Part No.:
IXFN420N10T
Brand:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

420A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-227

Series

GigaMOS Trench HiperFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

2.3mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

670nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.07kW

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Height

9.6mm

Length

38.23mm

Standards/Approvals

No

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


MOSFET Transistors, IXYS


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