IXYS GigaMOS TrenchT2 HiperFET N-Channel MOSFET, 310 A, 150 V, 4-Pin SOT-227 IXFN360N15T2

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Subtotal (1 tube of 10 units)*

£403.71

(exc. VAT)

£484.45

(inc. VAT)

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  • 70 unit(s) ready to ship
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Units
Per unit
Per Tube*
10 +£40.371£403.71

*price indicative

RS Stock No.:
168-4578
Mfr. Part No.:
IXFN360N15T2
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

310 A

Maximum Drain Source Voltage

150 V

Series

GigaMOS TrenchT2 HiperFET

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

1.07 kW

Maximum Gate Source Voltage

-20 V, +20 V

Length

38.23mm

Width

25.07mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

715 nC @ 10 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

9.6mm

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