IXYS GigaMOS TrenchT2 HiperFET N-Channel MOSFET, 310 A, 150 V, 4-Pin SOT-227 IXFN360N15T2

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Subtotal (1 tube of 10 units)*

£403.71

(exc. VAT)

£484.45

(inc. VAT)

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Units
Per unit
Per Tube*
10 +£40.371£403.71

*price indicative

RS Stock No.:
168-4578
Mfr. Part No.:
IXFN360N15T2
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

310 A

Maximum Drain Source Voltage

150 V

Series

GigaMOS TrenchT2 HiperFET

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

1.07 kW

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

715 nC @ 10 V

Width

25.07mm

Length

38.23mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

9.6mm

Forward Diode Voltage

1.2V

COO (Country of Origin):
PH

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series



MOSFET Transistors, IXYS


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