IXYS GigaMOS, HiperFET N-Channel MOSFET, 500 A, 75 V, 24-Pin SMPD MMIX1F520N075T2

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Subtotal (1 tube of 20 units)*

£311.30

(exc. VAT)

£373.56

(inc. VAT)

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Units
Per unit
Per Tube*
20 +£15.565£311.30

*price indicative

RS Stock No.:
168-4790
Mfr. Part No.:
MMIX1F520N075T2
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

500 A

Maximum Drain Source Voltage

75 V

Series

GigaMOS, HiperFET

Package Type

SMPD

Mounting Type

Surface Mount

Pin Count

24

Maximum Drain Source Resistance

1.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

830 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

25.25mm

Number of Elements per Chip

1

Width

23.25mm

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

545 nC @ 10 V

Forward Diode Voltage

1.25V

Minimum Operating Temperature

-55 °C

Height

5.7mm

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series



MOSFET Transistors, IXYS


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