IXYS GigaMOS, HiperFET N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD MMIX1T600N04T2

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Subtotal (1 tube of 20 units)*

£459.70

(exc. VAT)

£551.64

(inc. VAT)

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  • 80 unit(s) ready to ship
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Per unit
Per Tube*
20 +£22.985£459.70

*price indicative

RS Stock No.:
168-4791
Mfr. Part No.:
MMIX1T600N04T2
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

600 A

Maximum Drain Source Voltage

40 V

Series

GigaMOS, HiperFET

Package Type

SMPD

Mounting Type

Surface Mount

Pin Count

24

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

830 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Width

23.25mm

Length

25.25mm

Typical Gate Charge @ Vgs

590 nC @ 10 V

Number of Elements per Chip

1

Height

5.7mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
DE

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series



MOSFET Transistors, IXYS


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