IXYS GigaMOS, HiperFET N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD MMIX1T600N04T2

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Subtotal (1 tube of 20 units)*

£459.70

(exc. VAT)

£551.64

(inc. VAT)

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  • 80 unit(s) ready to ship
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Units
Per unit
Per Tube*
20 +£22.985£459.70

*price indicative

RS Stock No.:
168-4791
Mfr. Part No.:
MMIX1T600N04T2
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

600 A

Maximum Drain Source Voltage

40 V

Series

GigaMOS, HiperFET

Package Type

SMPD

Mounting Type

Surface Mount

Pin Count

24

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

830 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

23.25mm

Maximum Operating Temperature

+175 °C

Length

25.25mm

Transistor Material

Si

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

590 nC @ 10 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

5.7mm

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