IXYS GigaMOS, HiperFET N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD MMIX1F180N25T

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Subtotal (1 tube of 20 units)*

£668.16

(exc. VAT)

£801.80

(inc. VAT)

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Units
Per unit
Per Tube*
20 +£33.408£668.16

*price indicative

RS Stock No.:
146-1770
Mfr. Part No.:
MMIX1F180N25T
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

132 A

Maximum Drain Source Voltage

250 V

Series

GigaMOS, HiperFET

Package Type

SMPD

Mounting Type

Surface Mount

Pin Count

24

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

570 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

364 nC @ 10 V

Width

23.25mm

Maximum Operating Temperature

+150 °C

Length

25.25mm

Height

5.7mm

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
DE

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series



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