IXYS GigaMOS, HiperFET N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD MMIX1F180N25T

View all MOSFETs
Bulk discount available

Subtotal (1 unit)*

£37.54

(exc. VAT)

£45.05

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 25 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 4£37.54
5 - 9£30.61
10 - 19£29.77
20 - 39£28.83
40 +£28.12

*price indicative

Packaging Options:
RS Stock No.:
875-2481
Mfr. Part No.:
MMIX1F180N25T
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

132 A

Maximum Drain Source Voltage

250 V

Package Type

SMPD

Series

GigaMOS, HiperFET

Mounting Type

Surface Mount

Pin Count

24

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

570 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

364 nC @ 10 V

Number of Elements per Chip

1

Width

23.25mm

Length

25.25mm

Transistor Material

Si

Forward Diode Voltage

1.3V

Height

5.7mm

Minimum Operating Temperature

-55 °C

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series



MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links