IXYS GigaMOS, HiperFET N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD MMIX1F180N25T

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Subtotal (1 unit)*

£37.54

(exc. VAT)

£45.05

(inc. VAT)

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Units
Per unit
1 - 4£37.54
5 - 9£30.61
10 - 19£29.77
20 - 39£28.83
40 +£28.12

*price indicative

Packaging Options:
RS Stock No.:
875-2481
Mfr. Part No.:
MMIX1F180N25T
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

132 A

Maximum Drain Source Voltage

250 V

Package Type

SMPD

Series

GigaMOS, HiperFET

Mounting Type

Surface Mount

Pin Count

24

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

570 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

25.25mm

Typical Gate Charge @ Vgs

364 nC @ 10 V

Width

23.25mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

5.7mm

Forward Diode Voltage

1.3V

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series



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