N-Channel MOSFET, 132 A, 250 V, 24-Pin SMPD IXYS MMIX1F180N25T
- RS Stock No.:
- 875-2481
- Mfr. Part No.:
- MMIX1F180N25T
- Brand:
- IXYS
Available to back order for despatch 28/11/2024
Added
Price Each
£38.98
(exc. VAT)
£46.78
(inc. VAT)
| Units | Per unit |
| 1 - 4 | £38.98 |
| 5 - 9 | £31.78 |
| 10 - 19 | £30.91 |
| 20 - 39 | £29.93 |
| 40 + | £29.20 |
- RS Stock No.:
- 875-2481
- Mfr. Part No.:
- MMIX1F180N25T
- Brand:
- IXYS
Legislation and Compliance
Product Details
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 132 A |
| Maximum Drain Source Voltage | 250 V |
| Series | GigaMOS, HiperFET |
| Package Type | SMPD |
| Mounting Type | Surface Mount |
| Pin Count | 24 |
| Maximum Drain Source Resistance | 13 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 570 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Typical Gate Charge @ Vgs | 364 nC @ 10 V |
| Length | 25.25mm |
| Maximum Operating Temperature | +150 °C |
| Width | 23.25mm |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Forward Diode Voltage | 1.3V |
| Height | 5.7mm |
| Minimum Operating Temperature | -55 °C |
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