IXYS GigaMOS, HiperFET N-Channel MOSFET, 500 A, 75 V, 24-Pin SMPD MMIX1F520N075T2

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Subtotal (1 unit)*

£22.33

(exc. VAT)

£26.80

(inc. VAT)

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1 - 4£22.33
5 - 9£20.04
10 - 19£19.18
20 - 79£18.26
80 +£16.99

*price indicative

Packaging Options:
RS Stock No.:
875-2471
Distrelec Article No.:
302-53-512
Mfr. Part No.:
MMIX1F520N075T2
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

500 A

Maximum Drain Source Voltage

75 V

Package Type

SMPD

Series

GigaMOS, HiperFET

Mounting Type

Surface Mount

Pin Count

24

Maximum Drain Source Resistance

1.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

830 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+175 °C

Length

25.25mm

Typical Gate Charge @ Vgs

545 nC @ 10 V

Number of Elements per Chip

1

Transistor Material

Si

Width

23.25mm

Height

5.7mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.25V

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series



MOSFET Transistors, IXYS


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