IXYS GigaMOS, HiperFET N-Channel MOSFET, 550 A, 55 V Enhancement, 24-Pin SMPD MMIX1T550N055T2

Subtotal (20 units, in tubes of 20)*

£690.64

(exc. VAT)

£828.76

(inc. VAT)

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Units
Per unit
Per Tube*
20 +£34.532£690.64

*price indicative

RS Stock No.:
168-4794
Mfr. Part No.:
MMIX1T550N055T2
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

550A

Maximum Drain Source Voltage Vds

55V

Package Type

SMPD

Series

GigaMOS, HiperFET

Mount Type

Surface

Pin Count

24

Maximum Drain Source Resistance Rds

1.3mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

830W

Typical Gate Charge Qg @ Vgs

595nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-20V, +20V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Length

25.25mm

Height

5.7mm

Width

23.25mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
DE

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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