IXYS GigaMOS, HiperFET N-Channel MOSFET, 550 A, 55 V, 24-Pin SMPD MMIX1T550N055T2

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Subtotal (1 tube of 20 units)*

£690.64

(exc. VAT)

£828.76

(inc. VAT)

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Units
Per unit
Per Tube*
20 +£34.532£690.64

*price indicative

RS Stock No.:
168-4794
Mfr. Part No.:
MMIX1T550N055T2
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

550 A

Maximum Drain Source Voltage

55 V

Series

GigaMOS, HiperFET

Package Type

SMPD

Mounting Type

Surface Mount

Pin Count

24

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Maximum Power Dissipation

830 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

23.25mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

595 nC @ 10 V

Length

25.25mm

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Height

5.7mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

COO (Country of Origin):
DE

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series



MOSFET Transistors, IXYS


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