IXYS GigaMOS, HiperFET Type N-Channel MOSFET, 550 A, 55 V Enhancement, 24-Pin SMPD

Subtotal (1 tube of 20 units)*

£690.64

(exc. VAT)

£828.76

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later
Units
Per unit
Per Tube*
20 +£34.532£690.64

*price indicative

RS Stock No.:
168-4794
Mfr. Part No.:
MMIX1T550N055T2
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

550A

Maximum Drain Source Voltage Vds

55V

Package Type

SMPD

Series

GigaMOS, HiperFET

Mount Type

Surface

Pin Count

24

Maximum Drain Source Resistance Rds

1.3mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

595nC

Maximum Power Dissipation Pd

830W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Height

5.7mm

Length

25.25mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
DE

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

Related links