IXYS GigaMOS, HiperFET Type N-Channel MOSFET, 600 A, 40 V Enhancement, 24-Pin SMPD MMIX1T600N04T2
- RS Stock No.:
- 875-2475
- Distrelec Article No.:
- 302-53-513
- Mfr. Part No.:
- MMIX1T600N04T2
- Brand:
- IXYS
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
£29.60
(exc. VAT)
£35.52
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 93 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 1 | £29.60 |
| 2 - 4 | £29.01 |
| 5 - 9 | £28.12 |
| 10 - 14 | £27.82 |
| 15 + | £27.52 |
*price indicative
- RS Stock No.:
- 875-2475
- Distrelec Article No.:
- 302-53-513
- Mfr. Part No.:
- MMIX1T600N04T2
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 600A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | GigaMOS, HiperFET | |
| Package Type | SMPD | |
| Mount Type | Surface | |
| Pin Count | 24 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 830W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 590nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 25.25mm | |
| Height | 5.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 600A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series GigaMOS, HiperFET | ||
Package Type SMPD | ||
Mount Type Surface | ||
Pin Count 24 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 830W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 590nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 25.25mm | ||
Height 5.7mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS GigaMOS 600 A 24-Pin SMPD
- IXYS GigaMOS 500 A 24-Pin SMPD
- IXYS GigaMOS 550 A 24-Pin SMPD
- IXYS GigaMOS 550 A 24-Pin SMPD MMIX1T550N055T2
- IXYS GigaMOS 500 A 24-Pin SMPD MMIX1F520N075T2
- IXYS Single GigaMOS 132 A 24-Pin SMPD MMIX1F180N25T
- IXYS GigaMOS TrenchT2 HiperFET Type N-Channel MOSFET 150 V Enhancement, 4-Pin SOT-227
- IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-227