IXYS GigaMOS, HiperFET N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD MMIX1T600N04T2
- RS Stock No.:
- 875-2475
- Distrelec Article No.:
- 302-53-513
- Mfr. Part No.:
- MMIX1T600N04T2
- Brand:
- IXYS
Subtotal (1 unit)*
£34.56
(exc. VAT)
£41.47
(inc. VAT)
FREE delivery for orders over £50.00
- 93 unit(s) ready to ship
Units | Per unit |
---|---|
1 - 1 | £34.56 |
2 - 4 | £33.87 |
5 - 9 | £32.83 |
10 - 14 | £32.48 |
15 + | £32.14 |
*price indicative
- RS Stock No.:
- 875-2475
- Distrelec Article No.:
- 302-53-513
- Mfr. Part No.:
- MMIX1T600N04T2
- Brand:
- IXYS
Select all | Attribute | Value |
---|---|---|
Brand | IXYS | |
Channel Type | N | |
Maximum Continuous Drain Current | 600 A | |
Maximum Drain Source Voltage | 40 V | |
Series | GigaMOS, HiperFET | |
Package Type | SMPD | |
Mounting Type | Surface Mount | |
Pin Count | 24 | |
Maximum Drain Source Resistance | 1.3 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.5V | |
Maximum Power Dissipation | 830 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 25.25mm | |
Typical Gate Charge @ Vgs | 590 nC @ 10 V | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Width | 23.25mm | |
Transistor Material | Si | |
Forward Diode Voltage | 1.2V | |
Height | 5.7mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 600 A | ||
Maximum Drain Source Voltage 40 V | ||
Series GigaMOS, HiperFET | ||
Package Type SMPD | ||
Mounting Type Surface Mount | ||
Pin Count 24 | ||
Maximum Drain Source Resistance 1.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Maximum Power Dissipation 830 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 25.25mm | ||
Typical Gate Charge @ Vgs 590 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Width 23.25mm | ||
Transistor Material Si | ||
Forward Diode Voltage 1.2V | ||
Height 5.7mm | ||
Minimum Operating Temperature -55 °C | ||
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