IXYS GigaMOS, HiperFET N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD MMIX1T600N04T2

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£34.56

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£41.47

(inc. VAT)

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1 - 1£34.56
2 - 4£33.87
5 - 9£32.83
10 - 14£32.48
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Packaging Options:
RS Stock No.:
875-2475
Distrelec Article No.:
302-53-513
Mfr. Part No.:
MMIX1T600N04T2
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

600 A

Maximum Drain Source Voltage

40 V

Series

GigaMOS, HiperFET

Package Type

SMPD

Mounting Type

Surface Mount

Pin Count

24

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

830 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

590 nC @ 10 V

Maximum Operating Temperature

+175 °C

Length

25.25mm

Number of Elements per Chip

1

Width

23.25mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

5.7mm

Forward Diode Voltage

1.2V

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series



MOSFET Transistors, IXYS


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