STMicroelectronics SCTW70N SiC N-Channel MOSFET, 91 A, 1200 V, 3-Pin HiP247 SCTW70N120G2V

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£31.09

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£37.31

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1 - 4£31.09
5 - 9£30.24
10 - 14£29.45
15 - 19£28.70
20 +£27.97

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Packaging Options:
RS Stock No.:
233-3024
Mfr. Part No.:
SCTW70N120G2V
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

91 A

Maximum Drain Source Voltage

1200 V

Series

SCTW70N

Package Type

HiP247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.021 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Transistor Material

SiC

Number of Elements per Chip

1

The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the Sic material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

Very high operating junction temperature capability (TJ = 200 °C)
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitances

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