STMicroelectronics SCTW40N MOSFET, 36 A, 1200 V, 3-Pin HiP247 SCTW40N120G2V

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Subtotal (1 tube of 30 units)*

£371.19

(exc. VAT)

£445.44

(inc. VAT)

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Units
Per unit
Per Tube*
30 +£12.373£371.19

*price indicative

RS Stock No.:
219-4227
Mfr. Part No.:
SCTW40N120G2V
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

1200 V

Series

SCTW40N

Package Type

HiP247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.7 O

Maximum Gate Threshold Voltage

4.9V

Number of Elements per Chip

1

The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very high operating junction temperature capability (TJ = 200 °C)
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance

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