STMicroelectronics N-Channel MOSFET, 60 A, 1200 V, 3-Pin HiP247 SCTW60N120G2

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Subtotal (1 tube of 30 units)*

£548.19

(exc. VAT)

£657.84

(inc. VAT)

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Units
Per unit
Per Tube*
30 +£18.273£548.19

*price indicative

RS Stock No.:
239-5529
Mfr. Part No.:
SCTW60N120G2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

1200 V

Package Type

HiP247

Mounting Type

Through Hole

Pin Count

3

The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. It can be used in Switching mode power supply, DC-DC converters and Industrial motor control.

Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Very high operating junction temperature capability

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