STMicroelectronics N-Channel MOSFET, 60 A, 1200 V, 3-Pin HiP247 SCTW60N120G2
- RS Stock No.:
- 239-5529
- Mfr. Part No.:
- SCTW60N120G2
- Brand:
- STMicroelectronics
Subtotal (1 tube of 30 units)*
£548.19
(exc. VAT)
£657.84
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 240 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
---|---|---|
30 + | £18.273 | £548.19 |
*price indicative
- RS Stock No.:
- 239-5529
- Mfr. Part No.:
- SCTW60N120G2
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 60 A | |
Maximum Drain Source Voltage | 1200 V | |
Package Type | HiP247 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 60 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type HiP247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. It can be used in Switching mode power supply, DC-DC converters and Industrial motor control.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Very high operating junction temperature capability
Extremely low gate charge and input capacitance
Very high operating junction temperature capability
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