STMicroelectronics SCT Type N-Channel MOSFET, 56 A, 1200 V Enhancement, 3-Pin Hip-247

View all MOSFETs

Subtotal (1 unit)*

£22.61

(exc. VAT)

£27.13

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 30 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 +£22.61

*price indicative

Packaging Options:
RS Stock No.:
215-073
Mfr. Part No.:
SCT025W120G3AG
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247

Series

SCT

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

22 V

Typical Gate Charge Qg @ Vgs

73nC

Maximum Power Dissipation Pd

388W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

200°C

Height

5mm

Length

34.8mm

Width

15.6 mm

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

Related links