STMicroelectronics SCT SiC N-Channel MOSFET, 56 A, 1200 V, 3-Pin HIP247 SCT025W120G3AG

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£33.84

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Packaging Options:
RS Stock No.:
215-073
Mfr. Part No.:
SCT025W120G3AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

56 A

Maximum Drain Source Voltage

1200 V

Package Type

HIP247

Series

SCT

Mounting Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances
Very fast and robust intrinsic body diode

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