STMicroelectronics SCT SiC N-Channel MOSFET, 40 A, 1200 V, 3-Pin HIP247 SCT040W120G3AG

View all MOSFETs

Subtotal (1 tube of 30 units)*

£470.04

(exc. VAT)

£564.06

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 30 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
30 +£15.668£470.04

*price indicative

RS Stock No.:
215-234
Mfr. Part No.:
SCT040W120G3AG
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

HIP247

Mounting Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances
Very fast and robust intrinsic body diode

Related links