STMicroelectronics N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247 SCT30N120

View all MOSFETs

Subtotal (1 tube of 30 units)*

£444.42

(exc. VAT)

£533.31

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 300 unit(s), ready to ship
Units
Per unit
Per Tube*
30 +£14.814£444.42

*price indicative

RS Stock No.:
168-8966
Mfr. Part No.:
SCT30N120
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

1200 V

Package Type

HiP247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

270 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +25 V

Transistor Material

Si

Typical Gate Charge @ Vgs

105 nC @ 20 V

Length

15.75mm

Width

5.15mm

Maximum Operating Temperature

+200 °C

Number of Elements per Chip

1

Height

20.15mm

Forward Diode Voltage

3.5V

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics


Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems.


MOSFET Transistors, STMicroelectronics

Related links