STMicroelectronics SCTW35 SiC N-Channel MOSFET, 45 A, 650 V, 3-Pin HiP247 SCTW35N65G2V

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Subtotal (1 tube of 30 units)*

£325.05

(exc. VAT)

£390.06

(inc. VAT)

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Units
Per unit
Per Tube*
30 +£10.835£325.05

*price indicative

RS Stock No.:
201-0859
Mfr. Part No.:
SCTW35N65G2V
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

650 V

Series

SCTW35

Package Type

HiP247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.045 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Transistor Material

SiC

Number of Elements per Chip

1

The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 45A and drain to source resistance 45m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode
Low capacitance

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