STMicroelectronics Silicon N-Channel MOSFET, 45 A, 650 V, 4-Pin HiP247-4 SCTWA35N65G2V-4

View all MOSFETs
Bulk discount available

Subtotal (1 unit)*

£10.97

(exc. VAT)

£13.16

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 241 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 4£10.97
5 - 9£10.68
10 - 24£10.39
25 - 49£10.13
50 +£9.88

*price indicative

Packaging Options:
RS Stock No.:
233-0473
Mfr. Part No.:
SCTWA35N65G2V-4
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

650 V

Package Type

HiP247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.067 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Transistor Material

Silicon

Number of Elements per Chip

1

The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode
Low capacitances
Source sensing pin for increased efficiency

Related links