STMicroelectronics Silicon N-Channel MOSFET, 45 A, 650 V, 4-Pin HiP247-4 SCTWA35N65G2V-4

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Packaging Options:
RS Stock No.:
233-0473
Mfr. Part No.:
SCTWA35N65G2V-4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

650 V

Package Type

HiP247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.067 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

Silicon

The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode
Low capacitances
Source sensing pin for increased efficiency

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