STMicroelectronics SCTWA40N12G24AG SiC N-Channel MOSFET, 33 A, 1200 V, 4-Pin HiP247 SCTWA40N12G24AG

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Subtotal (1 tube of 30 units)*

£517.83

(exc. VAT)

£621.39

(inc. VAT)

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Per Tube*
30 +£17.261£517.83

*price indicative

RS Stock No.:
214-972
Mfr. Part No.:
SCTWA40N12G24AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

33 A

Maximum Drain Source Voltage

1200 V

Series

SCTWA40N12G24AG

Package Type

HiP247

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

COO (Country of Origin):
CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency

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