SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCTW40N120G2VAG
- RS Stock No.:
- 202-5489
- Mfr. Part No.:
- SCTW40N120G2VAG
- Brand:
- STMicroelectronics
Available to back order for despatch 21/07/2025
Price Each (In a Tube of 30)
£14.07
(exc. VAT)
£16.88
(inc. VAT)
Units | Per unit | Per Tube* |
|---|---|---|
| 30 + | £14.07 | £422.10 |
*price indicative
- RS Stock No.:
- 202-5489
- Mfr. Part No.:
- SCTW40N120G2VAG
- Brand:
- STMicroelectronics
Technical Reference
Legislation and Compliance
Product Details
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
Very fast and robust intrinsic body diode
Low capacitance
Low capacitance
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 33 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | HiP247 |
| Series | SCT |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 0.105 Ω |
| Channel Mode | Depletion |
| Maximum Gate Threshold Voltage | 5V |
| Transistor Material | SiC |
| Number of Elements per Chip | 1 |
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