STMicroelectronics SCT SiC N-Channel MOSFET Module, 45 A, 650 V Depletion, 3-Pin HiP247 SCTW35N65G2VAG
- RS Stock No.:
- 202-5487
- Mfr. Part No.:
- SCTW35N65G2VAG
- Brand:
- STMicroelectronics
Subtotal (1 tube of 30 units)*
£320.94
(exc. VAT)
£385.14
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 26 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 + | £10.698 | £320.94 |
*price indicative
- RS Stock No.:
- 202-5487
- Mfr. Part No.:
- SCTW35N65G2VAG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 45 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | HiP247 | |
| Series | SCT | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.055 Ω | |
| Channel Mode | Depletion | |
| Maximum Gate Threshold Voltage | 5V | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 45 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type HiP247 | ||
Series SCT | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.055 Ω | ||
Channel Mode Depletion | ||
Maximum Gate Threshold Voltage 5V | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
Very fast and robust intrinsic body diode
Low capacitance
Low capacitance
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