STMicroelectronics SCT SiC N-Channel MOSFET Module, 45 A, 650 V Depletion, 3-Pin HiP247 SCTW35N65G2VAG

Subtotal (1 tube of 30 units)*

£320.94

(exc. VAT)

£385.14

(inc. VAT)

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Units
Per unit
Per Tube*
30 +£10.698£320.94

*price indicative

RS Stock No.:
202-5487
Mfr. Part No.:
SCTW35N65G2VAG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

650 V

Package Type

HiP247

Series

SCT

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.055 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

5V

Transistor Material

SiC

Number of Elements per Chip

1

The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.

Very fast and robust intrinsic body diode
Low capacitance

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