STMicroelectronics Silicon N-Channel MOSFET, 91 A, 1200 V, 4-Pin HiP247-4 SCTWA70N120G2V-4
- RS Stock No.:
- 233-0474
- Mfr. Part No.:
- SCTWA70N120G2V-4
- Brand:
- STMicroelectronics
Subtotal (1 tube of 30 units)*
£953.91
(exc. VAT)
£1,144.68
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 360 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 + | £31.797 | £953.91 |
*price indicative
- RS Stock No.:
- 233-0474
- Mfr. Part No.:
- SCTWA70N120G2V-4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 91 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | HiP247-4 | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 0.03 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.9V | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 91 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type HiP247-4 | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 0.03 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.9V | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Very high operating junction temperature capability (TJ = 200 °C)
Source sensing pin for increased efficiency
Extremely low gate charge and input capacitance
Very high operating junction temperature capability (TJ = 200 °C)
Source sensing pin for increased efficiency
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