STMicroelectronics SCTWA40N120G2V-4 SiC N-Channel MOSFET, 45 A, 1200 V, 4-Pin HiP247-4 SCTWA40N120G2V-4
- RS Stock No.:
- 212-2093
- Mfr. Part No.:
- SCTWA40N120G2V-4
- Brand:
- STMicroelectronics
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 212-2093
- Mfr. Part No.:
- SCTWA40N120G2V-4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 45 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Series | SCTWA40N120G2V-4 | |
| Package Type | HiP247-4 | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 0.07 Ω | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 45 A | ||
Maximum Drain Source Voltage 1200 V | ||
Series SCTWA40N120G2V-4 | ||
Package Type HiP247-4 | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 0.07 Ω | ||
Transistor Material SiC | ||
SiC MOSFET
The STMicroelectronics 650 V, 55 mΩ SCTH35N65G2V-7 STPOWER SiC MOSFET with a trench field-stop (TFS) IGBT of the same voltage rating and equivalent on-state resistance. The STPOWER SiC MOSFET exhibits significantly reduced switching losses, even at high temperatures. This enables designer to operate at very high switching frequencies, reducing the size of passive components for smaller form factors.
Very low switching losses
Low power losses at high temperatures
Higher operating temperature (up to 200 ˚C)
Body diode with no recovery losses
Easy to drive
Low power losses at high temperatures
Higher operating temperature (up to 200 ˚C)
Body diode with no recovery losses
Easy to drive
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