STMicroelectronics N-Channel MOSFET, 45 A, 1200 V, 3-Pin HiP247 SCT30N120

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£16.87

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£20.24

(inc. VAT)

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  • Final 316 unit(s) shipping from 10 October 2025
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5 - 9£16.03
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Packaging Options:
RS Stock No.:
907-4741
Mfr. Part No.:
SCT30N120
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

1200 V

Package Type

HiP247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

270 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +25 V

Typical Gate Charge @ Vgs

105 nC @ 20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+200 °C

Width

5.15mm

Length

15.75mm

Transistor Material

Si

Height

20.15mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

3.5V

N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics


Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems.


MOSFET Transistors, STMicroelectronics

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