STMicroelectronics SCTWA40N120G2V-4 SiC N-Channel MOSFET, 45 A, 1200 V, 4-Pin HiP247-4 SCTWA40N120G2V-4

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Packaging Options:
RS Stock No.:
212-2094
Mfr. Part No.:
SCTWA40N120G2V-4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

1200 V

Package Type

HiP247-4

Series

SCTWA40N120G2V-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.07 Ω

Transistor Material

SiC

SiC MOSFET


The STMicroelectronics 650 V, 55 mΩ SCTH35N65G2V-7 STPOWER SiC MOSFET with a trench field-stop (TFS) IGBT of the same voltage rating and equivalent on-state resistance. The STPOWER SiC MOSFET exhibits significantly reduced switching losses, even at high temperatures. This enables designer to operate at very high switching frequencies, reducing the size of passive components for smaller form factors.

Very low switching losses
Low power losses at high temperatures
Higher operating temperature (up to 200 ˚C)
Body diode with no recovery losses
Easy to drive

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