STMicroelectronics SCTWA90N65G2V-4 SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4
- RS Stock No.:
- 213-3945
- Mfr. Part No.:
- SCTWA90N65G2V-4
- Brand:
- STMicroelectronics
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Subtotal (1 unit)*
£22.98
(exc. VAT)
£27.58
(inc. VAT)
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- Shipping from 29 June 2026
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Units | Per unit |
|---|---|
| 1 - 4 | £22.98 |
| 5 - 9 | £22.37 |
| 10 - 24 | £21.81 |
| 25 + | £21.26 |
*price indicative
- RS Stock No.:
- 213-3945
- Mfr. Part No.:
- SCTWA90N65G2V-4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 119 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | SCTWA90N65G2V-4 | |
| Package Type | HiP247-4 | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 0.024 O | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 119 A | ||
Maximum Drain Source Voltage 650 V | ||
Series SCTWA90N65G2V-4 | ||
Package Type HiP247-4 | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 0.024 O | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
The STMicroelectronics SCTWA90N65G2V-4 silicon carbide Power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
High speed switching performance
Very high operating junction temperature capability
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
Very high operating junction temperature capability
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
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