STMicroelectronics SCTWA90N65G2V-4 SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4

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£22.98

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£27.58

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1 - 4£22.98
5 - 9£22.37
10 - 24£21.81
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Packaging Options:
RS Stock No.:
213-3945
Mfr. Part No.:
SCTWA90N65G2V-4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

119 A

Maximum Drain Source Voltage

650 V

Package Type

HiP247-4

Series

SCTWA90N65G2V-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.024 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC

The STMicroelectronics SCTWA90N65G2V-4 silicon carbide Power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.

High speed switching performance
Very high operating junction temperature capability
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency

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