STMicroelectronics Silicon N-Channel MOSFET, 91 A, 1200 V, 4-Pin HiP247-4 SCTWA70N120G2V-4

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Packaging Options:
RS Stock No.:
233-0475
Mfr. Part No.:
SCTWA70N120G2V-4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

91 A

Maximum Drain Source Voltage

1200 V

Package Type

HiP247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

0.03 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Number of Elements per Chip

1

Transistor Material

Silicon

The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Very high operating junction temperature capability (TJ = 200 °C)
Source sensing pin for increased efficiency

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