STMicroelectronics SCTWA40N12G24AG SiC N-Channel MOSFET, 33 A, 1200 V, 4-Pin HiP247 SCTWA40N12G24AG

View all MOSFETs

Subtotal (1 unit)*

£24.05

(exc. VAT)

£28.86

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 30 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 +£24.05

*price indicative

Packaging Options:
RS Stock No.:
214-973
Mfr. Part No.:
SCTWA40N12G24AG
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

33 A

Maximum Drain Source Voltage

1200 V

Package Type

HiP247

Series

SCTWA40N12G24AG

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

COO (Country of Origin):
CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency

Related links