STMicroelectronics SCT SiC N-Channel MOSFET, 129 A, 1200 V, 4-Pin HiP247-4 SCT015W120G3-4AG

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Subtotal (1 tube of 30 units)*

£1,360.95

(exc. VAT)

£1,633.14

(inc. VAT)

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30 +£45.365£1,360.95

*price indicative

RS Stock No.:
215-222
Mfr. Part No.:
SCT015W120G3-4AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

129 A

Maximum Drain Source Voltage

1200 V

Package Type

HiP247-4

Series

SCT

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

Extremely low gate charge and input capacitance
Very fast and robust intrinsic body diode

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