STMicroelectronics SCT SiC N-Channel MOSFET, 55 A, 650 V, 4-Pin HiP247-4 SCT018W65G3-4AG

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£27.63

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£33.16

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RS Stock No.:
482-971
Mfr. Part No.:
SCT018W65G3-4AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

650 V

Package Type

HiP247-4

Series

SCT

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Transistor Material

SiC

COO (Country of Origin):
CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency

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