STMicroelectronics SCT SiC N-Channel MOSFET, 110 A, 900 V, 4-Pin HiP247-4 SCT012W90G3-4AG

View all MOSFETs
Bulk discount available

Subtotal (1 unit)*

£52.76

(exc. VAT)

£63.31

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 10 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 4£52.76
5 +£51.18

*price indicative

RS Stock No.:
482-970
Mfr. Part No.:
SCT012W90G3-4AG
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

900 V

Series

SCT

Package Type

HiP247-4

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Transistor Material

SiC

COO (Country of Origin):
CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

AEC-Q101 qualified
High speed switching performances
Very fast and robust intrinsic body diode

Related links