STMicroelectronics SCT SiC N-Channel MOSFET, 100 A, 1200 V, 4-Pin HiP247-4 SCT020W120G3-4AG
- RS Stock No.:
- 215-070
- Mfr. Part No.:
- SCT020W120G3-4AG
- Brand:
- STMicroelectronics
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£52.59
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£63.11
(inc. VAT)
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- 30 unit(s) ready to ship
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Units | Per unit |
---|---|
1 - 9 | £52.59 |
10 + | £47.33 |
*price indicative
- RS Stock No.:
- 215-070
- Mfr. Part No.:
- SCT020W120G3-4AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 100 A | |
Maximum Drain Source Voltage | 1200 V | |
Package Type | HiP247-4 | |
Series | SCT | |
Mounting Type | Through Hole | |
Pin Count | 4 | |
Channel Mode | Enhancement | |
Transistor Material | SiC | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type HiP247-4 | ||
Series SCT | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using STs advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Extremely low gate charge and input capacitance
Very fast and robust intrinsic body diode
Very fast and robust intrinsic body diode
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