STMicroelectronics SCT SiC N-Channel MOSFET, 129 A, 1200 V, 4-Pin HiP247-4 SCT015W120G3-4AG

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£63.22

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£75.86

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Packaging Options:
RS Stock No.:
215-223
Mfr. Part No.:
SCT015W120G3-4AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

129 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

HiP247-4

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

Extremely low gate charge and input capacitance
Very fast and robust intrinsic body diode

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