STMicroelectronics SCTW70N SiC N-Channel MOSFET, 91 A, 1200 V, 3-Pin HiP247 SCTW70N120G2V
- RS Stock No.:
- 233-3023
- Mfr. Part No.:
- SCTW70N120G2V
- Brand:
- STMicroelectronics
Subtotal (1 tube of 30 units)*
£888.27
(exc. VAT)
£1,065.93
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 29 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 + | £29.609 | £888.27 |
*price indicative
- RS Stock No.:
- 233-3023
- Mfr. Part No.:
- SCTW70N120G2V
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 91 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | HiP247 | |
| Series | SCTW70N | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.021 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.9V | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 91 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type HiP247 | ||
Series SCTW70N | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.021 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.9V | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the Sic material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Very high operating junction temperature capability (TJ = 200 °C)
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitances
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitances
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