STMicroelectronics SCTW70N SiC N-Channel MOSFET, 91 A, 1200 V, 3-Pin HiP247 SCTW70N120G2V

View all MOSFETs

Subtotal (1 tube of 30 units)*

£888.27

(exc. VAT)

£1,065.93

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 29 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
30 +£29.609£888.27

*price indicative

RS Stock No.:
233-3023
Mfr. Part No.:
SCTW70N120G2V
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

91 A

Maximum Drain Source Voltage

1200 V

Package Type

HiP247

Series

SCTW70N

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.021 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Transistor Material

SiC

Number of Elements per Chip

1

The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the Sic material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

Very high operating junction temperature capability (TJ = 200 °C)
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitances

Related links