STMicroelectronics SCTW MOSFET, 60 A, 1200 V, 4-Pin HiP247-4 SCTWA60N120G2-4

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Subtotal (1 tube of 30 units)*

£648.15

(exc. VAT)

£777.78

(inc. VAT)

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Units
Per unit
Per Tube*
30 +£21.605£648.15

*price indicative

RS Stock No.:
230-0093
Mfr. Part No.:
SCTWA60N120G2-4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

1200 V

Package Type

HiP247-4

Series

SCTW

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

5.2e+007 Ω

Maximum Gate Threshold Voltage

5V

The STMicroelectronics SCTWA60N is silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency

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