STMicroelectronics SCT SiC N-Channel MOSFET, 30 A, 1200 V, 4-Pin HiP247-4 SCT070W120G3-4

View all MOSFETs

Subtotal (1 unit)*

£14.87

(exc. VAT)

£17.84

(inc. VAT)

Add to Basket
Select or type quantity
New product - Preorder today
  • Shipping from 29 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 +£14.87

*price indicative

Packaging Options:
RS Stock No.:
214-964
Mfr. Part No.:
SCT070W120G3-4
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

1200 V

Package Type

HiP247-4

Series

SCT

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

COO (Country of Origin):
CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances
Very fast and robust intrinsic body diode

Related links