STMicroelectronics SCT SiC N-Channel MOSFET, 30 A, 650 V, 4-Pin HiP247-4 SCT040W65G3-4
- RS Stock No.:
- 366-221
- Mfr. Part No.:
- SCT040W65G3-4
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 unit)*
£11.89
(exc. VAT)
£14.27
(inc. VAT)
Stock information currently inaccessible
Units | Per unit |
---|---|
1 - 9 | £11.89 |
10 - 99 | £10.70 |
100 + | £9.87 |
*price indicative
- RS Stock No.:
- 366-221
- Mfr. Part No.:
- SCT040W65G3-4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 30 A | |
Maximum Drain Source Voltage | 650 V | |
Package Type | HiP247-4 | |
Series | SCT | |
Mounting Type | Through Hole | |
Pin Count | 4 | |
Channel Mode | Enhancement | |
Transistor Material | SiC | |
Number of Elements per Chip | 1 | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type HiP247-4 | ||
Series SCT | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using STs advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Very high operating junction temperature capability
Source sensing pin for increased efficiency
High speed switching performances
Very fast and robust intrinsic body diode
Very high operating junction temperature capability
Source sensing pin for increased efficiency
Related links
- STMicroelectronics SCT SiC N-Channel MOSFET 650 V, 4-Pin HiP247-4 SCT040W65G3-4AG
- STMicroelectronics SCT SiC N-Channel MOSFET 650 V, 4-Pin HiP247-4 SCT055W65G3-4AG
- STMicroelectronics SCT SiC N-Channel MOSFET 1200 V, 4-Pin HiP247-4 SCT070W120G3-4AG
- STMicroelectronics SCT SiC N-Channel MOSFET 1200 V, 4-Pin HiP247-4 SCT070W120G3-4
- STMicroelectronics SCT SiC N-Channel MOSFET 650 V, 4-Pin HiP247-4 SCT027W65G3-4AG
- STMicroelectronics SCT SiC N-Channel MOSFET 650 V, 4-Pin HiP247-4 SCT018W65G3-4AG
- STMicroelectronics SCT SiC N-Channel MOSFET 1200 V, 4-Pin HiP247-4 SCT025W120G3-4AG
- STMicroelectronics SCT SiC N-Channel MOSFET 900 V, 4-Pin HiP247-4 SCT012W90G3-4AG