STMicroelectronics SCTW90 SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 SCTW90N65G2V
- RS Stock No.:
- 201-0886
- Mfr. Part No.:
- SCTW90N65G2V
- Brand:
- STMicroelectronics
Subtotal (1 tube of 30 units)*
£688.11
(exc. VAT)
£825.72
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 29 June 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 + | £22.937 | £688.11 |
*price indicative
- RS Stock No.:
- 201-0886
- Mfr. Part No.:
- SCTW90N65G2V
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 119 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | HiP247 | |
| Series | SCTW90 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.024 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 119 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type HiP247 | ||
Series SCTW90 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.024 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 119A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very high operating junction temperature capability (TJ = 175 °C)
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitances
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitances
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