STMicroelectronics SCTW90 SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 SCTW90N65G2V

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Subtotal (1 tube of 30 units)*

£688.11

(exc. VAT)

£825.72

(inc. VAT)

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Units
Per unit
Per Tube*
30 +£22.937£688.11

*price indicative

RS Stock No.:
201-0886
Mfr. Part No.:
SCTW90N65G2V
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

119 A

Maximum Drain Source Voltage

650 V

Package Type

HiP247

Series

SCTW90

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.024 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC

The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 119A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very high operating junction temperature capability (TJ = 175 °C)
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitances

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