STMicroelectronics SCTWA35N65G2V SiC N-Channel SiC Power Module, 45 A, 650 V, 3-Pin HiP247 SCTWA35N65G2V
- RS Stock No.:
- 204-3957
- Mfr. Part No.:
- SCTWA35N65G2V
- Brand:
- STMicroelectronics
Subtotal (1 tube of 30 units)*
£301.11
(exc. VAT)
£361.32
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 60 unit(s), ready to ship
Units | Per unit | Per Tube* |
|---|---|---|
| 30 + | £10.037 | £301.11 |
*price indicative
- RS Stock No.:
- 204-3957
- Mfr. Part No.:
- SCTWA35N65G2V
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 45 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | HiP247 | |
| Series | SCTWA35N65G2V | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.072 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.2V | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 45 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type HiP247 | ||
Series SCTWA35N65G2V | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.072 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.2V | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics silicon carbide Power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of both on-resistance and switching losses is almost independent of junction temperature.
Low capacitance
Very fast and robust intrinsic body diode
Very tight variation of on-resistance vs. temperature
Very fast and robust intrinsic body diode
Very tight variation of on-resistance vs. temperature
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