STMicroelectronics SCTWA35N65G2V SiC N-Channel SiC Power Module, 45 A, 650 V, 3-Pin HiP247 SCTWA35N65G2V

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£11.57

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RS Stock No.:
204-3959
Mfr. Part No.:
SCTWA35N65G2V
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

650 V

Series

SCTWA35N65G2V

Package Type

HiP247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.072 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.2V

Transistor Material

SiC

Number of Elements per Chip

1

COO (Country of Origin):
CN
The STMicroelectronics silicon carbide Power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of both on-resistance and switching losses is almost independent of junction temperature.

Low capacitance
Very fast and robust intrinsic body diode
Very tight variation of on-resistance vs. temperature

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